12-26 vol. 1 sales offices: visit our web site at http://www.temex.com silicon pin diodes microwave applications typ. min. max typ. min. max max typ. eh60033 c2a 25 25 50 0.14 0.08 0.12 1.8 20 eh60034 c2a 30 25 50 0.20 0.12 0.17 1.5 20 eh60035 c2a 35 25 50 0.28 0.17 0.23 1.0 25 eh60036 c2a 55 25 50 0.45 0.23 0.40 0.9 30 eh60037 c2a 65 25 50 0.70 0.40 0.60 0.7 40 eh60052 c2a 30 50 70 0.10 0.06 0.08 1.8 30 eh60053 c2a 35 50 70 0.14 0.08 0.12 1.4 30 eh60054 c2a 40 50 70 0.20 0.12 0.17 1.1 35 EH60055 c2a 50 50 70 0.28 0.17 0.23 1.0 40 eh60056 c2a 65 50 70 0.45 0.23 0.40 0.9 50 eh60057 c2a 80 50 70 0.70 0.40 0.60 0.8 60 eh60072 c2a 40 70 90 0.10 0.06 0.08 1.7 50 eh60074 c2a 50 70 90 0.20 0.12 0.17 1.4 60 eh60076 c2a 80 70 90 0.45 0.23 0.40 0.9 100 eh60102 c2a 50 90 120 0.10 0.06 0.08 1.7 150 eh60104 c2a 70 90 120 0.20 0.12 0.17 1.2 250 eh60106 c2a 110 90 120 0.45 0.23 0.40 0.8 400 these passivated mesa pin diodes have a thin i layer. this series of diodes is available as chips and in hermetic ceramic packages. they operate as power dependent variable resistances and provide passive receiver protection (low noise ampli?rs, mixers, and detectors). silicon limiter pin diodes electrical characteristics description (1) other values of capacitance available on request type case m v pf pf ? ns test conditions i r =10 a v r =0v v r =6v i f =10ma f = 1 mhz f = 1 mhz f = 120 mhz characteristics at 25? g old d ia breakdown voltage v br junction capacitance c j0 junction capacitance c j -6 (1) series resistance r sf minority carrier lifetime i i f =10ma i r = 6 ma chip diodes packaged diodes
12-27 vol. 1 sales offices: visit our web site at http://www.temex.com silicon pin diodes microwave applications c b = 0.12 pf (3) dh60033 f 27d m208 80 + 10 + 20 0.1 + 50 2.0 dh60034 f 27d m208 80 + 10 + 20 0.1 + 50 2.0 dh60035 f 27d m208 70 + 10 + 21 0.1 + 52 2.5 dh60036 f 27d m208 60 + 10 + 22 0.2 + 53 3.0 dh60037 f 27d m208 50 + 10 + 23 0.2 + 56 4.0 dh60052 f 27d m208 80 + 15 + 24 0.1 + 52 2.5 dh60053 f 27d m208 70 + 15 + 24 0.1 + 52 2.5 dh60054 f 27d m208 60 + 15 + 25 0.1 + 53 3.0 dh60055 f 27d m208 50 + 15 + 26 0.1 + 54 3.5 dh60056 f 27d m208 45 + 15 + 27 0.2 + 57 4.0 dh60057 f 27d m208 45 + 15 + 28 0.2 + 58 5.0 dh60072 f 27d m208 70 + 18 + 27 0.1 + 54 3.0 dh60074 f 27d m208 50 + 18 + 30 0.2 + 55 4.0 dh60076 f 27d m208 40 + 18 + 32 0.2 + 58 5.0 dh60102 f 27d m208 60 + 20 + 31 0.2 + 56 3.5 dh60104 f 27d m208 50 + 20 + 33 0.2 + 59 5.0 dh60106 f 27d m208 35 + 20 + 35 0.3 + 61 7.0 (2) other capacitance values available on request temperature ranges: (3) c t = c j +c b operating junction (t j ) : -55 c to +125 c storage : -65 c to +200 c type standard case (2) test conditions p diss = 1w case f 27d f = 2.7 ghz 1db limiting f = 2.7 ghz f = 2.7 ghz p in = -10 dbm 1 ? pulse 1% dc characteristics at 25? thermal resistance r th threshold p l leakage power p out insertion loss l peak power p in cw power p in ?/w dbm dbm db dbm w c b = 0.18 pf (3) max typ. typ. typ. max max packaged diodes nominal microwave characteristics
|
